搜索
新闻详情

SOT-MRAM

新型存储之MRAM资讯

1
发表时间:2023-12-22 13:58作者:全球芯 | glochip.com来源:Netsol | MRAM | SRAM网址:http://glochip.com/news/
文章附图

SOT-MRAM (spin-orbit torque MRAM) has the potential to challenge STT-MRAM, as it is a faster, denser and much more efficient memory technology.

SOT-MRAM vs STT-MRAM bitcell

SOT-MRAM devices feature switching of the free magnetic layer done by injecting an in-plane current in an adjacent SOT layer, unlike STT-MRAM where the current is injected perpendicularly into the magnetic tunnel junction and the read and write operation is performed through the same path.

In June 2018, researchers from Imec fabricated SOT-MRAM devices on 300mm wafers using CMOS compatible processes, for the first time.

The latest SOT-MRAM news

Researchers demonstrate fast BiSb p-MTJ switching, to enable fast and low-power SOT-MRAM devices

Researchers from the Tokyo Institute of Technology have successfully demonstrated fast p-MTJ switching (1 ns, compared to current switching that is >10 ns). "The researchers achieved this using the topological insulator BiSb as the SOT layer, and say the device offers a current density about 20 times smaller than typical.

fast low-power BiSb p-MTJ switching (Tokyo-IT)

The researchers say that this technology can be applied to develop p-MTJs for SOT-MRAM that will offer ultrafast operations and ultra low power consumption, while also offering higher reliability. This follows earlier work by the same group on BiSb p-MTJs.

Read the full story Posted: Sep 02,2023

Researchers say MnPd3 will enable a breakthrough in SOT-MRAM memory devices

Researchers from the School of Engineering at Stanford University discovered that a metallic compound called manganese palladium three MnPd3 is a promising material to build SOT-MRAM memory devices.

Z-axes spin polarization in MnPd3

The researchers say that the new material enables a breakthrough in SOT-MRAM device performance, as it is the first material that generates spin in the z-direction, rather than the y-direction as in most materials, which is a property needed in high-performance SOT-MRAM. In fact MnPd3 is able to generate spins in any orientation because its internal structure lacks the kind of crystal symmetry that would force all of the electrons into a particular orientation.

Read the full story Posted: May 10,2023

Hprobe releases a new MRAM testing module to help increase production yields

Hprobe, a developer of testing equipment for magnetic devices, announced a new addition to its product line, the RF Pulse Module. The company says that this is the commercially available testing system to both collect statistics of error rate of the memory unit cell and take a deep look into switching dynamics of resistive memories.

Hprobe IBEX WAT H3DM Light photo

Hprobe's IBEX system

Hprobe says that the RF Pulse Module is two orders of magnitude faster than existing devices and can help increase manufacturing yields. Hprobe has already begun shipping to tier-1 companies and major research institutes around the world.

Read the full story Posted: Dec 03,2022

ITRI joins forces with TSMC and NYCU to develop next-gen MRAM technologies

Taiwan's Industrial Technology Research Institute (ITRI) announced two new MRAM collaborations. The first one is with Taiwan's TSMC, for the development of SOT-MRAM array chips. The second collaboration is with National Yang Ming Chiao Tung University (NYCU) to develop magnetic memory technology that can perform across a wide operating temperature range of nearly 400 degrees Celsius.

Together with TSMC, ITRI is developing low-voltage and current SOT-MRAM, that features high write efficiecny and low write voltage. ITRI says that its SOT-MRAM achieves a writing speed of 0.4 nanoseconds and a high endurance of 7 trillion reads and writes. The memory also offers a data storage lifespan of over 10 years.

Read the full story Posted: Jun 28,2022

ISI introduces a new 3-Axis magnet option for its MRAM tester systems, targeting STT-MRAM and SOT-MRAM testing

Integral Solutions International (ISI) announced a new 3-Axis Magnet Option for wafer-level testing. Combined with ISI's WLA5000 Tester, the 3D magnetic fields produced by this system can be used for characterization of MRAM devices in addition to 2D/3D Magnetic Sensors.

ISI WLA5000 MRAM tester

ISI says that for MRAM applications, the 3D Magnetic fields produced by ISI’s 3-Axis Magnet Option delivers solutions for both STT-MRAM and SOT-MRAM applications.


Read the full story Posted: Mar 04,2022

ITRI and UCLA to co-develop VC-MRAM technologies

Taiwan-based Industrial Technology Research Institute (ITRI) announced an agreement with the University of California, Los Angeles (UCLA) to co-develop Voltage-Control MRAM (VC-MRAM) technologies.

UCLA-ITRI-VC-MRAM-prototype

ITRI says that VC-MRAM is a type of SOT-MRAM that offers improved performance - 50% higher writing speed and 75% less energy consumption. VC-MRAM is said to be ideal for AIoT and automotive industry applications. The partnership is expected to strengthen the link between both parties and accelerate the R&D and industrialization of new memory technologies.


Read the full story Posted: Mar 04,2022

NTU and TSMC researchers develop a new SOT-MRAM structure with high spin-orbital Hall conductivity

Researchers from National Taiwan University in collaboration with TSMC developed a new SOT-MRAM device structure, that features sizable orbital currents. This research promises a pathway for enhancing SOT-MRAM performance by harnessing both the conventional spin currents and the emergent orbital currents.

NTU TSMC PtCr Alloys SOT-MRAMThe new device is based on 3d light transition metals (such as V and Cr) that are incorporated into the classical spin Hall metal Pt. The Pt-Cr alloy enhances the charge-to-spin conversion efficiency which can realize high spin-orbital Hall conductivity, beyond the conventional spin Hall limit.

Read the full story Posted: Feb 27,2022

Researchers developed an ultra low power BiSb-based SOT MRAM device

Researchers from the Tokyo Institute of Technology developed an ultrahigh-efficiency SOT magnetization switching in fully sputtered BiSb(Co/Pt) multilayers with large perpendicular magnetic anisotropy (PMA).

Scheme of ultra low power BiSb SOT-MRAM device (Tokyo IT)

The new device offers a large spin Hall angle and high electrical conductivity, thus satisfying all the three requirements for SOT-MRAM implementation. The researchers managed to achieve robust SOT magnetization at a low current density despite the large PMA field.

Read the full story Posted: Feb 23,2022

Hprobe launches a next-generation MRAM wafer sort magnetic test head

Hprobe announced a new magnetic test head for MRAM Wafer Sort. The new module, the H3DM-XL, is at the heart of the latest addition to Hprobe’s IBEX line, the IBEX-WS.

Hprobe MRAM Wafer-Sort Magnetic Test Head (IBEX-WS)

The IBEX-WS test equipment integrates 3D magnetic field capabilities, while increasing field area and uniformity for wafer probing large MRAM arrays. It also features a unique patented robotized 3D Field Calibration Unit (FCU) for high-speed field mapping and monitoring.


Read the full story Posted: Dec 01,2021

Taiwan's Semiconductor Research Institute developed an SOT-MRAM device based on a PMA technique

Researchers at Taiwan's Semiconductor Research Institute (TSRI) unveiled a new SOT-MRAM memory device that they developed in collaboration with University scientists.

TSRI SOT MRAM device photo

The new device uses a perpendicular magnetic anisotropy (PMA) technique. According to the TSRI researchers, they are the second team to successfully produce MRAM chips based on PMA (Intel is the first team to have achieved this).


文章分类: MRAM
分享到:
首页                                    产品展示                                        行业资讯                                   关于我们                                        联系我们
联系电话:
0755-84828852  
0755-84866816

联系方式: 手机号码:13924642346  13872769588
                13924649321  13928483205 联系邮箱:kevin@glochip.com
公司地址:
广东省深圳市龙岗区大运软件小镇1栋401室
(3号线,14号线,16号线,33号线)
网址:www.glochip.com   www.chip.com.cn
全球芯微信公众号
加密芯片 华芯微特   艾迪科泰    博雅科技    恒烁半导体    补丁科技    晶存科技   华大电子    康盈半导体     三星半导体   海力士  镁光科技     南亚科技  铠侠  金士顿   Skyhigh  Netsol
MCU  SRAM MRAM SDRAM DDR1 DDR2 DDR3 DDR4 DDR5 LPDDR3 LPDDR4 LPDDR4X LPDDR5 LPDDR5X NAND NOR eMMC UFS eMCP uMCP